Tandem Van de Graaff
For any experiments that need low energy beams of ions from protons to gold.
The Brookhaven National Laboratory Tandem Van de Graaff has provided users with a versatile platform for ion-beam research in nuclear physics, materials science, and applied technology for more than four decades. Originally designed as a multipurpose high-voltage accelerator, the facility enabled early studies in nuclear structure, heavy-ion collisions, and astrophysics with its ability to accelerate a broad range of ion species. Over the years, the Tandem has evolved into a uniquely flexible experimental facility, capable of delivering precisely controlled ion beams from hydrogen to gold over a wide range of energies. This flexibility has supported diverse applications, including radiation effects testing for space electronics, precision ion implantation for semiconductor device development, and fundamental investigations of ion–solid interactions. Today, the Tandem is distinguished by its ability to configure multiple experimental stations simultaneously, tailoring beam delivery to meet user requirements. Its adaptability has enabled pioneering advances in deep ion implantation for wide-bandgap semiconductors, lattice-damage mitigation strategies, and single-event effect characterization.
Facility bio
Name of Facility: Tandem Van der Graaf
Laboratory: Brookhaven National Laboratory
Address: PO Box 5000, Upton, NY 11973
Point of Contact: Tom Kubley
Facility website: Link
| Parameter | Value |
|---|---|
| Beam Type | Ion beams (H to Au, multiple charge states) |
| Beam Energy | ~0.2 – 300 MeV (species dependent, up to 15 MV terminal voltage × charge state) |
| Repetition Rate | Continuous (DC beam; beam pulsing available with deflectors if required) |
| Beam Current | pA – µA (species and application dependent) |
| Energy Spread (deltaE/E) | 10^-4 - 10^-3 |
| Beam spot size | ~ 100 μm to few mm (tunable with optics) |
| Other | Quick ion changes |
Science specialists: Dannie Steski (accelerator operations, ion sources and beam delivery)
Thomas Kubley (ion implantation, ion beam applications, and materials effects)
Capabilities
Available tools: Dual 15 MV electrostatic accelerators, sputter and duoplasmatron ion sources, magnetic and electrostatic analyzers for charge-state selection, multi-branch beamlines with precision steering and focusing, High temperature implantation stage, in-air and vacuum irradiation/implantation stations, and single-event effect (SEE) test stations with dosimetry.
For more on the capabilities below, see: https://www.bnl.gov/tandem/capabilities/
High Energy Ion Implantation
Implantation of N or Al ions to form “p” and ‘n” type superjunctions in silicon carbide to a depth of >15 mm. Implantation temperatures between 20oC – ~10000C
Single Event Effects and Detector Calibration
Testing of electronics in high radiation environments.
Using the well-defined energy of the Tandem to calibrate particle detectors
Ion Flux: 10^2 to 10^7 ions per cm^2 per second
Ideal Experiment
The ideal experiment at the BNL Tandem Van de Graaff will take advantage of its capability to deliver a broad range of ion species and energies with high stability and control. Research should exploit this flexibility for precision ion implantation in advanced semiconductors, radiation effects testing and detector calibration of microelectronics, or investigations of fundamental ion–solid interactions. Experiments may involve in-air or vacuum stations, with characterization performed through in situ dosimetry, beam profile diagnostics, or post-irradiation analysis. To make the most of scheduled access time, experiments should be well defined and fully utilize the facility’s versatile beam delivery and diagnostic systems.
